to ? 92 1. emitter 2. collector 3. base jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors 2SD2152 transistor (npn) features z high dc current gain z low saturation medium current application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.05ma,i e =0 22 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 22 v emitter-base breakdown voltage v (br)ebo i e =0.01ma,i c =0 6 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a h fe(1) v ce =2v, i c =0.15ma 130 h fe(2) v ce =2v, i c =100ma 180 950 dc current gain h fe(3) v ce =2v, i c =500ma 180 collector-emitter saturation voltage v ce(sat) i c =2000ma,i b =100ma 0.4 v transition frequency f t v ce =6v,i c =50ma, f=30mhz 150 mhz classification of h fe rank q r s t range 180-290 270-380 340-560 560-950 symbol parameter value unit v cbo collector-base voltage 22 v v ceo collector-emitter voltage 22 v v ebo emitter-base voltage 6 v i c collector current 3 a p c collector power dissipation 700 mw r ja thermal resistance from junction to ambient 178 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 c , dec ,2015
min max min m ax a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad lay out www.cj-elec.com , dec ,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 3 c,dec,2015
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